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FS225R12KE3BOSA1 Технические параметры

Infineon Technologies  FS225R12KE3BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 20 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 28Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.7V
Number of Elements 6 Elements
Operating Temperature -40°C~125°C
Series EconoPACK™+
Published 2002
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 29Terminations
ECCN Code EAR99
Max Power Dissipation 1.15kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 29
JESD-30 Code R-XUFM-X29
Qualification Status Not Qualified
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 1150W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 325A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.15V @15V, 225A
Turn Off Time-Nom (toff) 810 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 16nF @ 25V
Height 17mm
Length 162mm
Width 150mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

FS225R12KE3BOSA1 Документы

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