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FS225R12OE4PBOSA1 Технические параметры

Infineon Technologies  FS225R12OE4PBOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 26 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 450A
Number of Elements 6 Elements
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 29Terminations
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X29
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 20mW
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 350A
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 230 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 225A
Turn Off Time-Nom (toff) 570 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS Status ROHS3 Compliant
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FS225R12OE4PBOSA1 Документы

FS225R12OE4PBOSA1 brand manufacturers: Infineon Technologies, Anli stock, FS225R12OE4PBOSA1 reference price.Infineon Technologies. FS225R12OE4PBOSA1 parameters, FS225R12OE4PBOSA1 Datasheet PDF and pin diagram description download.You can use the FS225R12OE4PBOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FS225R12OE4PBOSA1 pin diagram and circuit diagram and usage method of function,FS225R12OE4PBOSA1 electronics tutorials.You can download from the Anli.