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FZ1200R33HE3BPSA1 Технические параметры

Infineon Technologies  FZ1200R33HE3BPSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 1200A
Number of Elements 3 Elements
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X3
Свойство продукта Значение свойства
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 13000W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Turn On Time 1150 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 1200A
Turn Off Time-Nom (toff) 3550 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 210nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

FZ1200R33HE3BPSA1 Документы

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