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IDB15E60ATMA1 Технические параметры

Infineon Technologies  IDB15E60ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 83.3W
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.80
Свойство продукта Значение свойства
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 50μA @ 600V
Voltage - Forward (Vf) (Max) @ If 2V @ 15A
Forward Current 29.2A
Operating Temperature - Junction -40°C~175°C
Halogen Free Halogen Free
Current - Average Rectified (Io) 29.2A DC
Forward Voltage 2V
Number of Phases 1Phase
Reverse Recovery Time 87 ns
Peak Reverse Current 50μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Non-Repetitive Surge Current 60A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IDB15E60ATMA1 Документы

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