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IDH12G65C6XKSA1 Технические параметры

Infineon Technologies  IDH12G65C6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-2
Surface Mount NO
Number of Elements 1 Element
Operating Temperature (Max.) 175°C
Power Dissipation (Max) 81W
Packaging Tube
Published 2017
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Applications EFFICIENCY
Additional Feature PD-CASE
Terminal Position SINGLE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T2
Configuration SINGLE
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 40μA @ 420V
Voltage - Forward (Vf) (Max) @ If 1.35V @ 12A
Case Connection CATHODE
Forward Current 27A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 27A DC
Number of Phases 1Phase
Reverse Recovery Time 0ns
Rep Pk Reverse Voltage-Max 650V
JEDEC-95 Code TO-220AC
Capacitance @ Vr, F 594pF @ 1V 1MHz
Reverse Current-Max 40μA
RoHS Status ROHS3 Compliant

IDH12G65C6XKSA1 Документы

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