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Infineon Technologies IDV20E65D1XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 Full Pack | |
| Number of Pins | 2Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 38W | |
| Packaging | Tube | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -40°C | |
| Applications | ULTRA FAST RECOVERY | |
| Additional Feature | FREE WHEELING DIODE, PD-CASE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.10.00.80 | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 40μA @ 650V | |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 20A | |
| Case Connection | ISOLATED | |
| Forward Current | 28A | |
| Operating Temperature - Junction | -40°C~175°C | |
| Halogen Free | Halogen Free | |
| Current - Average Rectified (Io) | 28A DC | |
| Max Reverse Voltage (DC) | 650V | |
| Average Rectified Current | 28A | |
| Number of Phases | 1Phase | |
| Reverse Recovery Time | 65 ns | |
| Max Repetitive Reverse Voltage (Vrrm) | 650V | |
| Peak Non-Repetitive Surge Current | 120A | |
| Reverse Current-Max | 40μA | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |