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IGB01N120H2ATMA1 Технические параметры

Infineon Technologies  IGB01N120H2ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 800V, 1A, 241 Ω, 15V
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Max Power Dissipation 28W
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 28W
Transistor Application SWITCHING
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 3.2A
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 1A
Gate Charge 8.6nC
Current - Collector Pulsed (Icm) 3.5A
Td (on/off) @ 25°C 13ns/370ns
Switching Energy 140μJ
RoHS Status ROHS3 Compliant
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IGB01N120H2ATMA1 Документы

IGB01N120H2ATMA1 brand manufacturers: Infineon Technologies, Anli stock, IGB01N120H2ATMA1 reference price.Infineon Technologies. IGB01N120H2ATMA1 parameters, IGB01N120H2ATMA1 Datasheet PDF and pin diagram description download.You can use the IGB01N120H2ATMA1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IGB01N120H2ATMA1 pin diagram and circuit diagram and usage method of function,IGB01N120H2ATMA1 electronics tutorials.You can download from the Anli.