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IGD06N60TATMA1 Технические параметры

Infineon Technologies  IGD06N60TATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 6A, 23 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchStop®
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 88W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *GD06N60
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 88W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 12A
JEDEC-95 Code TO-252AA
Max Breakdown Voltage 600V
Turn On Time 17 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 6A
Turn Off Time-Nom (toff) 249 ns
IGBT Type Trench Field Stop
Gate Charge 42nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 9ns/130ns
Switching Energy 200μJ
RoHS Status ROHS3 Compliant

IGD06N60TATMA1 Документы

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