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IGP30N65F5XKSA1 Технические параметры

Infineon Technologies  IGP30N65F5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 6.000006g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 1.6V
Number of Elements 1 Element
Test Conditions 400V, 15A, 23 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 188W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 188W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 55A
JEDEC-95 Code TO-220AB
Turn On Time 28 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Turn Off Time-Nom (toff) 206 ns
IGBT Type Trench
Gate Charge 65nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 19ns/170ns
Switching Energy 280μJ (on), 70μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IGP30N65F5XKSA1 Документы

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