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IGP40N65F5XKSA1 Технические параметры

Infineon Technologies  IGP40N65F5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 1.6V
Test Conditions 400V, 20A, 15 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop®
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 255W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power Dissipation 255W
Input Type Standard
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 74A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Gate Charge 95nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 19ns/160ns
Switching Energy 360μJ (on), 100μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 4.8V
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IGP40N65F5XKSA1 Документы

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