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IGU04N60TAKMA1 Технические параметры

Infineon Technologies  IGU04N60TAKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 4A, 47 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop™
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 42W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 42W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 8A
Turn On Time 24 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 4A
Turn Off Time-Nom (toff) 268 ns
IGBT Type Trench
Gate Charge 27nC
Current - Collector Pulsed (Icm) 12A
Td (on/off) @ 25°C 14ns/164ns
Switching Energy 61μJ (on), 84μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IGU04N60TAKMA1 Документы

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