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IGW30N100TFKSA1 Технические параметры

Infineon Technologies  IGW30N100TFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1kV
Number of Elements 1 Element
Test Conditions 600V, 30A, 16 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchStop®
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 412W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Input Type Standard
Power - Max 412W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 60A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 54 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 569 ns
IGBT Type Trench Field Stop
Gate Charge 217nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 33ns/535ns
Switching Energy 3.8mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
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IGW30N100TFKSA1 Документы

IGW30N100TFKSA1 brand manufacturers: Infineon Technologies, Anli stock, IGW30N100TFKSA1 reference price.Infineon Technologies. IGW30N100TFKSA1 parameters, IGW30N100TFKSA1 Datasheet PDF and pin diagram description download.You can use the IGW30N100TFKSA1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IGW30N100TFKSA1 pin diagram and circuit diagram and usage method of function,IGW30N100TFKSA1 electronics tutorials.You can download from the Anli.