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IGW30N60TPXKSA1 Технические параметры

Infineon Technologies  IGW30N60TPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 30A, 10.5 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 200W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 53A
Turn On Time 38 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
Turn Off Time-Nom (toff) 279 ns
IGBT Type Trench Field Stop
Gate Charge 130nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 15ns/179ns
Switching Energy 710μJ (on), 420μJ (off)
RoHS Status ROHS3 Compliant
Просмотр сходства

IGW30N60TPXKSA1 Документы

IGW30N60TPXKSA1 brand manufacturers: Infineon Technologies, Anli stock, IGW30N60TPXKSA1 reference price.Infineon Technologies. IGW30N60TPXKSA1 parameters, IGW30N60TPXKSA1 Datasheet PDF and pin diagram description download.You can use the IGW30N60TPXKSA1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IGW30N60TPXKSA1 pin diagram and circuit diagram and usage method of function,IGW30N60TPXKSA1 electronics tutorials.You can download from the Anli.