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IGW40N60TPXKSA1 Технические параметры

Infineon Technologies  IGW40N60TPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 67A
Number of Elements 1 Element
Test Conditions 400V, 40A, 10.1 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop™
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 246W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 49 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A
Turn Off Time-Nom (toff) 320 ns
IGBT Type Trench Field Stop
Gate Charge 177nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 18ns/222ns
Switching Energy 1.06mJ (on), 610μJ (off)
RoHS Status ROHS3 Compliant

IGW40N60TPXKSA1 Документы

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