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IGW75N65H5XKSA1 Технические параметры

Infineon Technologies  IGW75N65H5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Number of Elements 1 Element
Test Conditions 400V, 75A, 8 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 395W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 395W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 120A
Turn On Time 61 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn Off Time-Nom (toff) 232 ns
IGBT Type Trench
Gate Charge 160nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 28ns/174ns
Switching Energy 2.25mJ (on), 950μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IGW75N65H5XKSA1 Документы

IGW75N65H5XKSA1 brand manufacturers: Infineon Technologies, Anli stock, IGW75N65H5XKSA1 reference price.Infineon Technologies. IGW75N65H5XKSA1 parameters, IGW75N65H5XKSA1 Datasheet PDF and pin diagram description download.You can use the IGW75N65H5XKSA1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IGW75N65H5XKSA1 pin diagram and circuit diagram and usage method of function,IGW75N65H5XKSA1 electronics tutorials.You can download from the Anli.