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IHP10T120 Технические параметры

Infineon Technologies  IHP10T120 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 610V, 10A, 81 Ω, 15V
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series TrenchStop®
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 138W
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Power - Max 138W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 16A
Reverse Recovery Time 185 ns
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 69 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
Turn Off Time-Nom (toff) 769 ns
IGBT Type Trench Field Stop
Gate Charge 53nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 45ns/520ns
Switching Energy 1.46mJ
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IHP10T120 Документы

IHP10T120 brand manufacturers: Infineon Technologies, Anli stock, IHP10T120 reference price.Infineon Technologies. IHP10T120 parameters, IHP10T120 Datasheet PDF and pin diagram description download.You can use the IHP10T120 Transistors - IGBTs - Single, DSP Datesheet PDF, find IHP10T120 pin diagram and circuit diagram and usage method of function,IHP10T120 electronics tutorials.You can download from the Anli.