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IHW20N120R2 Технические параметры

Infineon Technologies  IHW20N120R2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Current-Collector (Ic) (Max) 40A
Number of Elements 1 Element
Test Conditions 600V, 20A, 15 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop®
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 330W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 330W
Case Connection COLLECTOR
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 20A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 20A
Turn Off Time-Nom (toff) 526 ns
IGBT Type NPT, Trench Field Stop
Gate Charge 143nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C -/359ns
Switching Energy 1.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS Status RoHS Compliant
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IHW20N120R2 Документы

IHW20N120R2 brand manufacturers: Infineon Technologies, Anli stock, IHW20N120R2 reference price.Infineon Technologies. IHW20N120R2 parameters, IHW20N120R2 Datasheet PDF and pin diagram description download.You can use the IHW20N120R2 Transistors - IGBTs - Single, DSP Datesheet PDF, find IHW20N120R2 pin diagram and circuit diagram and usage method of function,IHW20N120R2 electronics tutorials.You can download from the Anli.