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IHW20N120R3FKSA1 Технические параметры

Infineon Technologies  IHW20N120R3FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 20A, 15 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop®
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 310W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Input Type Standard
Power - Max 310W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 40A
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A
Turn Off Time-Nom (toff) 538 ns
IGBT Type Trench
Gate Charge 211nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C -/387ns
Switching Energy 950μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IHW20N120R3FKSA1 Документы

IHW20N120R3FKSA1 brand manufacturers: Infineon Technologies, Anli stock, IHW20N120R3FKSA1 reference price.Infineon Technologies. IHW20N120R3FKSA1 parameters, IHW20N120R3FKSA1 Datasheet PDF and pin diagram description download.You can use the IHW20N120R3FKSA1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IHW20N120R3FKSA1 pin diagram and circuit diagram and usage method of function,IHW20N120R3FKSA1 electronics tutorials.You can download from the Anli.