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IHW25N120E1XKSA1 Технические параметры

Infineon Technologies  IHW25N120E1XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series TrenchStop™
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 231W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 231W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 50A
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 25A
Turn Off Time-Nom (toff) 1677 ns
IGBT Type NPT and Trench
Gate Charge 147nC
Current - Collector Pulsed (Icm) 75A
Switching Energy 800μJ (off)
RoHS Status ROHS3 Compliant
Просмотр сходства

IHW25N120E1XKSA1 Документы

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