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IHW25N120R2FKSA1 Технические параметры

Infineon Technologies  IHW25N120R2FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Test Conditions 600V, 25A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 365W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 25A
Turn Off Time-Nom (toff) 463.6 ns
IGBT Type NPT
Gate Charge 60.7nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C -/324ns
Switching Energy 1.59mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IHW25N120R2FKSA1 Документы

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