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IHW30N100R Технические параметры

Infineon Technologies  IHW30N100R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1kV
Collector-Emitter Saturation Voltage 1.75V
Number of Elements 1 Element
Test Conditions 600V, 30A, 26 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN
Max Power Dissipation 412W
Pin Count 3
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 412W
Case Connection COLLECTOR
Input Type Standard
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 60A
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1000V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Turn Off Time-Nom (toff) 988.4 ns
IGBT Type Trench Field Stop
Gate Charge 209nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/846ns
Switching Energy 2.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IHW30N100R Документы

IHW30N100R brand manufacturers: Infineon Technologies, Anli stock, IHW30N100R reference price.Infineon Technologies. IHW30N100R parameters, IHW30N100R Datasheet PDF and pin diagram description download.You can use the IHW30N100R Transistors - IGBTs - Single, DSP Datesheet PDF, find IHW30N100R pin diagram and circuit diagram and usage method of function,IHW30N100R electronics tutorials.You can download from the Anli.