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IHW30N110R3FKSA1 Технические параметры

Infineon Technologies  IHW30N110R3FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.1kV
Number of Elements 1 Element
Test Conditions 600V, 30A, 15 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 333W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Input Type Standard
Power - Max 333W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.1kV
Max Collector Current 60A
Voltage - Collector Emitter Breakdown (Max) 1100V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 30A
Turn Off Time-Nom (toff) 470 ns
IGBT Type Trench
Gate Charge 180nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/350ns
Switching Energy 1.15mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IHW30N110R3FKSA1 Документы

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