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IHW30N135R3FKSA1 Технические параметры

Infineon Technologies  IHW30N135R3FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 1.35kV
Collector-Emitter Saturation Voltage 1.85V
Test Conditions 600V, 30A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop®
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 349W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power Dissipation 175W
Input Type Standard
Power - Max 349W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35kV
Max Collector Current 60A
Voltage - Collector Emitter Breakdown (Max) 1350V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 30A
IGBT Type Trench
Gate Charge 263nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/337ns
Switching Energy 1.93mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS Status RoHS Compliant
Lead Free Lead Free
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IHW30N135R3FKSA1 Документы

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