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IHW40N135R3FKSA1 Технические параметры

Infineon Technologies  IHW40N135R3FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Test Conditions 600V, 40A, 7.5 Ω, 15V
Collector-Emitter Saturation Voltage 1.85V
Collector-Emitter Breakdown Voltage 1.35kV
Published 2015
Packaging Tube
Operating Temperature -40°C~175°C TJ
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 429W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power Dissipation 215W
Input Type Standard
Power - Max 429W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35kV
Max Collector Current 80A
Voltage - Collector Emitter Breakdown (Max) 1350V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 40A
IGBT Type Trench
Gate Charge 365nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C -/343ns
Switching Energy 2.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS Status RoHS Compliant
Lead Free Lead Free
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IHW40N135R3FKSA1 Документы

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