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IHW50N65R6XKSA1 Технические параметры

Infineon Technologies  IHW50N65R6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Mfr Infineon Technologies
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 100 A
Test Conditions 400V, 50A, 10Ohm, 15V
Base Product Number IHW50
Maximum Gate Emitter Voltage ±20V
Package Type PG-TO247-3
Maximum Collector Emitter Voltage 650 V
Pd - Power Dissipation 251 W
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 240
Mounting Styles Through Hole
Part # Aliases IHW50N65R6 SP005399490
Manufacturer Infineon
Brand Infineon Technologies
RoHS Details
Свойство продукта Значение свойства
Collector- Emitter Voltage VCEO Max 650 V
Series -
Operating Temperature -40°C ~ 175°C (TJ)
Packaging Tube
Subcategory IGBTs
Technology Si
Pin Count 3
Configuration Single
Power Dissipation 251
Input Type Standard
Power - Max 251 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 650 V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 50A
Continuous Collector Current 100
IGBT Type -
Gate Charge 199 nC
Current - Collector Pulsed (Icm) 150 A
Td (on/off) @ 25°C 21ns/261ns
Switching Energy 1.5mJ (on), 660μJ (off)
Reverse Recovery Time (trr) 108 ns
Product Category IGBT Transistors
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IHW50N65R6XKSA1 Документы

  • Datasheets
IHW50N65R6XKSA1 brand manufacturers: Infineon Technologies, Anli stock, IHW50N65R6XKSA1 reference price.Infineon Technologies. IHW50N65R6XKSA1 parameters, IHW50N65R6XKSA1 Datasheet PDF and pin diagram description download.You can use the IHW50N65R6XKSA1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IHW50N65R6XKSA1 pin diagram and circuit diagram and usage method of function,IHW50N65R6XKSA1 electronics tutorials.You can download from the Anli.