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IKD04N60RAATMA1 Технические параметры

Infineon Technologies  IKD04N60RAATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Collector-Emitter Breakdown Voltage 600V
Test Conditions 400V, 4A, 43 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchStop™
Published 2013
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 75W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 75W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 8A
Reverse Recovery Time 43 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
IGBT Type Trench
Gate Charge 27nC
Current - Collector Pulsed (Icm) 12A
Td (on/off) @ 25°C 14ns/146ns
Switching Energy 90μJ (on), 150μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IKD04N60RAATMA1 Документы

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