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IKD04N60RFATMA1 Технические параметры

Infineon Technologies  IKD04N60RFATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Current-Collector (Ic) (Max) 8A
Number of Elements 1 Element
SwitchingFrequency -30kHz
Test Conditions 400V, 4A, 43 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchStop™
Published 2012
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 30W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 75W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 6A
Reverse Recovery Time 34 ns
Max Breakdown Voltage 600V
Turn On Time 18 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Turn Off Time-Nom (toff) 216 ns
IGBT Type Trench
Gate Charge 27nC
Current - Collector Pulsed (Icm) 12A
Td (on/off) @ 25°C 12ns/116ns
Switching Energy 60μJ (on), 50μJ (off)
Height 2.41mm
Length 6.73mm
Width 6.22mm
RoHS Status ROHS3 Compliant

IKD04N60RFATMA1 Документы

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