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IKD06N60RAATMA1 Технические параметры

Infineon Technologies  IKD06N60RAATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Test Conditions 400V, 6A, 23 Ω, 15V
Number of Elements 1 Element
Published 2012
Series TrenchStop™
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 100W
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application GENERAL PURPOSE
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 12A
Reverse Recovery Time 68 ns
Max Breakdown Voltage 600V
Turn On Time 22 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6A
Turn Off Time-Nom (toff) 335 ns
IGBT Type Trench Field Stop
Gate Charge 48nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 12ns/127ns
Switching Energy 110μJ (on), 220μJ (off)
RoHS Status ROHS3 Compliant
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IKD06N60RAATMA1 Документы

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