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IKD06N60RAATMA2 Технические параметры

Infineon Technologies  IKD06N60RAATMA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Test Conditions 400V, 6A, 23 Ω, 15V
Number of Elements 1 Element
Series TrenchStop®
Published 2012
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number *KD06N60
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application GENERAL PURPOSE
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 12A
Reverse Recovery Time 68ns
Turn On Time 22 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6A
Turn Off Time-Nom (toff) 335 ns
IGBT Type Trench
Gate Charge 48nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 12ns/127ns
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IKD06N60RAATMA2 Документы

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