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IKD06N60RFATMA1 Технические параметры

Infineon Technologies  IKD06N60RFATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Collector-Emitter Breakdown Voltage 600V
Test Conditions 400V, 6A, 23 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchStop®
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 100W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *KD06N60
Element Configuration Single
Input Type Standard
Power - Max 100W
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 12A
Reverse Recovery Time 48 ns
Max Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 6A
IGBT Type Trench Field Stop
Gate Charge 48nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 7ns/106ns
Switching Energy 90μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Просмотр сходства
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