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IKD10N60RAATMA2 Технические параметры

Infineon Technologies  IKD10N60RAATMA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 10A, 23 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchStop®
Published 2014
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 150W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *KD10N60
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 150W
Transistor Application GENERAL PURPOSE
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 62 ns
Turn On Time 24 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Turn Off Time-Nom (toff) 428 ns
IGBT Type Trench
Gate Charge 64nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 14ns/192ns
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IKD10N60RAATMA2 Документы

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