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IKD10N60RFATMA1 Технические параметры

Infineon Technologies  IKD10N60RFATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Collector-Emitter Breakdown Voltage 600V
Test Conditions 400V, 10A, 26 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Cut Tape (CT)
Series TrenchStop®
Published 2008
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *KD10N60
Свойство продукта Значение свойства
Element Configuration Single
Input Type Standard
Power - Max 150W
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 72 ns
Max Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
IGBT Type Trench Field Stop
Gate Charge 64nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 12ns/168ns
Switching Energy 190μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IKD10N60RFATMA1 Документы

IKD10N60RFATMA1 brand manufacturers: Infineon Technologies, Anli stock, IKD10N60RFATMA1 reference price.Infineon Technologies. IKD10N60RFATMA1 parameters, IKD10N60RFATMA1 Datasheet PDF and pin diagram description download.You can use the IKD10N60RFATMA1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IKD10N60RFATMA1 pin diagram and circuit diagram and usage method of function,IKD10N60RFATMA1 electronics tutorials.You can download from the Anli.