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IKQ50N120CH3XKSA1 Технические параметры

Infineon Technologies  IKQ50N120CH3XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100A
Number of Elements 1 Element
Test Conditions 600V, 50A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 652W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 68 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 50A
Turn Off Time-Nom (toff) 466 ns
Gate Charge 235nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 34ns/297ns
Switching Energy 3mJ (on), 1.9mJ (off)
RoHS Status ROHS3 Compliant

IKQ50N120CH3XKSA1 Документы

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