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Infineon Technologies IKW08N120CS7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | PG-TO247-3 | |
| Mfr | Infineon Technologies | |
| Package | Tube | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 21 A | |
| Test Conditions | 600V, 8A, 20Ohm, 15V | |
| Base Product Number | IKW08N | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | TO-247-3 | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Pd - Power Dissipation | 106 W | |
| Maximum Operating Temperature | + 175 C | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 240 | |
| Mounting Styles | Through Hole | |
| Part # Aliases | IKW08N120CS7 SP005419704 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Collector- Emitter Voltage VCEO Max | 1.2 kV | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Packaging | Tube | |
| Subcategory | IGBTs | |
| Technology | Si | |
| Pin Count | 3 | |
| Configuration | Single | |
| Power Dissipation | 106 | |
| Input Type | Standard | |
| Power - Max | 106 W | |
| Product Type | IGBT Transistors | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Channel Type | N | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 8A | |
| Continuous Collector Current | 21 | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 52 nC | |
| Current - Collector Pulsed (Icm) | 24 A | |
| Td (on/off) @ 25°C | 17ns/160ns | |
| Switching Energy | 370μJ (on), 400μJ (off) | |
| Reverse Recovery Time (trr) | 130 ns | |
| Product Category | IGBT Transistors |