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Infineon Technologies IKW15N120H3FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 26 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 30A | |
| Number of Elements | 1 Element | |
| Test Conditions | 600V, 15A, 35 Ω, 15V | |
| Operating Temperature | -40°C~175°C TJ | |
| Packaging | Tube | |
| Series | TrenchStop® | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Terminal Position | SINGLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Input Type | Standard | |
| Power - Max | 217W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Reverse Recovery Time | 260ns | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 49 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A | |
| Turn Off Time-Nom (toff) | 370 ns | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 75nC | |
| Current - Collector Pulsed (Icm) | 60A | |
| Td (on/off) @ 25°C | 21ns/260ns | |
| Switching Energy | 1.55mJ | |
| RoHS Status | ROHS3 Compliant |