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IKW20N60H3FKSA1 Технические параметры

Infineon Technologies  IKW20N60H3FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 20A, 14.6 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop®
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 170W
Base Part Number *KW20N60
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 170W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 112 ns
Turn On Time 37 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 20A
Turn Off Time-Nom (toff) 241 ns
IGBT Type Trench Field Stop
Gate Charge 120nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 17ns/194ns
Switching Energy 800μJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IKW20N60H3FKSA1 Документы

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