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IKW50N60DTPXKSA1 Технические параметры

Infineon Technologies  IKW50N60DTPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 50A, 7 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop™
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 319.2W
Свойство продукта Значение свойства
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 319.2W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 80A
Reverse Recovery Time 115 ns
Turn On Time 55 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
Turn Off Time-Nom (toff) 332 ns
IGBT Type Trench Field Stop
Gate Charge 249nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 20ns/215ns
Switching Energy 1.53mJ (on), 850μJ (off)
RoHS Status ROHS3 Compliant
Просмотр сходства

IKW50N60DTPXKSA1 Документы

IKW50N60DTPXKSA1 brand manufacturers: Infineon Technologies, Anli stock, IKW50N60DTPXKSA1 reference price.Infineon Technologies. IKW50N60DTPXKSA1 parameters, IKW50N60DTPXKSA1 Datasheet PDF and pin diagram description download.You can use the IKW50N60DTPXKSA1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IKW50N60DTPXKSA1 pin diagram and circuit diagram and usage method of function,IKW50N60DTPXKSA1 electronics tutorials.You can download from the Anli.