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IKW50N65ES5XKSA1 Технические параметры

Infineon Technologies  IKW50N65ES5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Number of Elements 1 Element
Test Conditions 400V, 50A, 8.2 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop™
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 274W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 274W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 70 ns
Turn On Time 45 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 50A
Turn Off Time-Nom (toff) 198 ns
IGBT Type Trench
Gate Charge 120nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 20ns/127ns
Switching Energy 1.23mJ (on), 550μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IKW50N65ES5XKSA1 Документы

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