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IKW75N60H3FKSA1 Технические параметры

Infineon Technologies  IKW75N60H3FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 75A, 5.2 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop®
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 428W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 428W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 190 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
IGBT Type Trench Field Stop
Gate Charge 470nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 31ns/265ns
Switching Energy 3mJ (on), 1.7mJ (off)
Height 20.7mm
Length 15.87mm
Width 5.31mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IKW75N60H3FKSA1 Документы

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