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IKW75N65ET7XKSA1 Технические параметры

Infineon Technologies  IKW75N65ET7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Mfr Infineon Technologies
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 80 A
Test Conditions 400V, 75A, 4.7Ohm, 15V
Base Product Number IKW75N65
Maximum Gate Emitter Voltage - 20 V, + 20 V
Pd - Power Dissipation 333 W
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 240
Mounting Styles Through Hole
Part # Aliases IKW75N65ET7 SP005348294
Manufacturer Infineon
Brand Infineon Technologies
Tradename TRENCHSTOP
Свойство продукта Значение свойства
RoHS Details
Collector- Emitter Voltage VCEO Max 650 V
Operating Temperature -40°C ~ 175°C (TJ)
Packaging Tube
Subcategory IGBTs
Technology Si
Configuration Single
Power Dissipation 333
Input Type Standard
Power - Max 333 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 650 V
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 75A
Continuous Collector Current 80
IGBT Type Trench Field Stop
Gate Charge 435 nC
Current - Collector Pulsed (Icm) 225 A
Td (on/off) @ 25°C 28ns/310ns
Switching Energy 2.17mJ (on), 1.23mJ (off)
Reverse Recovery Time (trr) 100 ns
Product Category IGBT Transistors
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IKW75N65ET7XKSA1 Документы

  • Datasheets
IKW75N65ET7XKSA1 brand manufacturers: Infineon Technologies, Anli stock, IKW75N65ET7XKSA1 reference price.Infineon Technologies. IKW75N65ET7XKSA1 parameters, IKW75N65ET7XKSA1 Datasheet PDF and pin diagram description download.You can use the IKW75N65ET7XKSA1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IKW75N65ET7XKSA1 pin diagram and circuit diagram and usage method of function,IKW75N65ET7XKSA1 electronics tutorials.You can download from the Anli.