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ILD03N60 Технические параметры
Infineon Technologies ILD03N60 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Mounting Type | Surface Mount | |
| Surface Mount | YES | |
| Supplier Device Package | PG-TO252-3-1 | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Infineon Technologies | |
| Product Status | Active | |
| Package | Bulk | |
| Test Conditions | 400V, 0.8A, 60Ohm, 10V | |
| Current-Collector (Ic) (Max) | 4.5 A | |
| Package Description | ROHS COMPLIANT, DPAK-3 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 65 ns | |
| Turn-off Time-Nom (toff) | 240 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | ILD03N60 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Risk Rank | 5.72 | |
| Part Package Code | TO-252AA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | LightMOS | |
| Operating Temperature | - | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Terminal Finish | MATTE TIN | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 27 W | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252AA | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 10V, 3A | |
| Collector Current-Max (IC) | 4.5 A | |
| IGBT Type | - | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate Charge | 8.5 nC | |
| Current - Collector Pulsed (Icm) | 5.5 A | |
| Td (on/off) @ 25°C | 15ns/100ns | |
| Switching Energy | 12μJ (on), 20μJ (off) | |
| Reverse Recovery Time (trr) | 250 ns |
ILD03N60 Документы
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