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IMW120R014M1HXKSA1 Технические параметры

Infineon Technologies  IMW120R014M1HXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Mfr Infineon Technologies
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Power Dissipation (Max) 455W (Tc)
Number of Elements per Chip 1
Package Type TO-247
Continuous Drain Current Id 127A
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 4.2 V
Pd - Power Dissipation 455 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 10 V, + 23 V
Свойство продукта Значение свойства
Minimum Operating Temperature - 55 C
Mounting Styles Through Hole
Channel Mode Enhancement
Qg - Gate Charge 110 nC
Rds On - Drain-Source Resistance 14 mOhms
Id - Continuous Drain Current 127 A
Operating Temperature -55°C ~ 175°C (TJ)
Pin Count 3
Number of Channels 1 ChannelChannel
Power Dissipation 455W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18.4mOhm @ 54.3A, 18V
Vgs(th) (Max) @ Id 5.2V @ 23.4mA
Input Capacitance (Ciss) (Max) @ Vds 4580 nF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 18 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) +20V, -5V
Channel Type N
FET Feature -
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IMW120R014M1HXKSA1 Документы

  • Datasheets
IMW120R014M1HXKSA1 brand manufacturers: Infineon Technologies, Anli stock, IMW120R014M1HXKSA1 reference price.Infineon Technologies. IMW120R014M1HXKSA1 parameters, IMW120R014M1HXKSA1 Datasheet PDF and pin diagram description download.You can use the IMW120R014M1HXKSA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IMW120R014M1HXKSA1 pin diagram and circuit diagram and usage method of function,IMW120R014M1HXKSA1 electronics tutorials.You can download from the Anli.