Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies IMW120R020M1HXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | PG-TO247-3 | |
| Mfr | Infineon Technologies | |
| Package | Tube | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 98A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
| Power Dissipation (Max) | 375W (Tc) | |
| Number of Elements per Chip | 1 | |
| Package Type | TO-247 | |
| Continuous Drain Current Id | 98A | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Vgs th - Gate-Source Threshold Voltage | 4.2 V | |
| Pd - Power Dissipation | 375 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 10 V, + 23 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 240 | |
| Mounting Styles | Through Hole | |
| Channel Mode | Enhancement | |
| Part # Aliases | IMW120R020M1H SP005448291 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | Infineon | |
| Brand | Infineon Technologies | |
| Qg - Gate Charge | 83 nC | |
| Rds On - Drain-Source Resistance | 19 mOhms | |
| RoHS | Details | |
| Id - Continuous Drain Current | 98 A | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Packaging | Tube | |
| Subcategory | MOSFETs | |
| Pin Count | 3 | |
| Number of Channels | 1 ChannelChannel | |
| Power Dissipation | 375W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 26.9mOhm @ 41A, 18V | |
| Vgs(th) (Max) @ Id | 5.2V @ 17.6mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3460 nF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 18 V | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Vgs (Max) | +20V, -5V | |
| Product Type | MOSFET | |
| Channel Type | N | |
| FET Feature | - | |
| Product | MOSFET | |
| Product Category | MOSFET |