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IPA180N10N3GXKSA1 Технические параметры

Infineon Technologies  IPA180N10N3GXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 28A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 30W Tc
Turn Off Delay Time 18 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection ISOLATED
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 3.5V @ 35μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 5ns
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 28A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 59 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPA180N10N3GXKSA1 Документы

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