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IPA60R360P7SXKSA1 Технические параметры

Infineon Technologies  IPA60R360P7SXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 22W Tc
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series CoolMOS™ P7
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140μA
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.36Ohm
Pulsed Drain Current-Max (IDM) 26A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 27 mJ
RoHS Status ROHS3 Compliant

IPA60R360P7SXKSA1 Документы

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