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IPA60R400CEXKSA1 Технические параметры

Infineon Technologies  IPA60R400CEXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10.3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 31W Tc
Turn Off Delay Time 56 ns
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series CoolMOS™ CE
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 300μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 9ns
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 10.3A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 600V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPA60R400CEXKSA1 Документы

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