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IPAW60R600CEXKSA1 Технические параметры

Infineon Technologies  IPAW60R600CEXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10.3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 28W Tc
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 444pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Continuous Drain Current (ID) 10.3A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 19A
DS Breakdown Voltage-Min 600V
FET Feature Super Junction
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

IPAW60R600CEXKSA1 Документы

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