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IPB011N04NGATMA1 Технические параметры

Infineon Technologies  IPB011N04NGATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 180A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 250W Tc
Turn Off Delay Time 63 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Свойство продукта Значение свойства
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 7
JESD-30 Code R-PSSO-G6
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection DRAIN
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 200μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 10ns
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPB011N04NGATMA1 Документы

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