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Infineon Technologies IPB014N06NATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-7, D2Pak (6 Leads + Tab) | |
| Number of Pins | 7Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3W Ta 214W Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V 10V | |
| Current - Continuous Drain (Id) @ 25℃ | 34A Ta 180A Tc | |
| Turn Off Delay Time | 47 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Cut Tape (CT) | |
| Series | OptiMOS™ | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Pin Count | 3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSSO-G6 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 214W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 22 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.4m Ω @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 2.8V @ 143μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 7800pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 106nC @ 10V | |
| Rise Time | 18ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 14 ns | |
| Continuous Drain Current (ID) | 180A | |
| Threshold Voltage | 2.8V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Max Dual Supply Voltage | 60V | |
| Drain Current-Max (Abs) (ID) | 34A | |
| Drain-source On Resistance-Max | 0.0014Ohm | |
| Drain to Source Breakdown Voltage | 60V | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |