[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IPB015N08N5ATMA1 Технические параметры

Infineon Technologies  IPB015N08N5ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7Pins
Weight 1.59999g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 180A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 375W Tc
Turn Off Delay Time 83 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G6
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Case Connection DRAIN
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 279μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 16900pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 222nC @ 10V
Rise Time 32ns
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Max Junction Temperature (Tj) 175°C
Height 4.5mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Просмотр сходства

IPB015N08N5ATMA1 Документы

IPB015N08N5ATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPB015N08N5ATMA1 reference price.Infineon Technologies. IPB015N08N5ATMA1 parameters, IPB015N08N5ATMA1 Datasheet PDF and pin diagram description download.You can use the IPB015N08N5ATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB015N08N5ATMA1 pin diagram and circuit diagram and usage method of function,IPB015N08N5ATMA1 electronics tutorials.You can download from the Anli.